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书名：芯片制造——半导体工艺制程实用教程（第六版）（英文版）
定价：109.0
ISBN：9787121404986
作者：彼得·范·赞特
版次：第1版
出版时间：2021-02
内容提要：
本书是一本介绍半导体集成电路和器件制造技术的专业书， 在半导体领域享有很高的声誉。本书的讨论范围包括半导体工艺的每个阶段： 从原材料的制备到封装、 测试和成品运输， 以及传统的和现代的工艺。全书提供了详细的插图和实例， 并辅以小结和习题， 以及内容丰富的术语表。第六版修订了微芯片制造领域的新进展， 讨论了用于图形化、 掺杂和薄膜步骤的先进工艺和尖端技术， 使隐含在复杂的现代半导体制造材料与工艺中的物理、 化学和电子的基础信息更易理解。本书的主要特点是避开了复杂的数学问题介绍工艺技术内容， 并加入了半导体业界的新成果， 可以使读者了解工艺技术发展的趋势。
作者简介：
Peter Van Zant 国际知名半导体专家，具有广阔的工艺工程、培训、咨询和写作方面的背景，他曾先后在IBM和德州仪器（TI）工作，之后再硅谷，又先后在美国国家半导体（National Semiconductor）和单片存储器（Monolithic Memories）公司任晶圆制造工艺工程和管理职位。他还曾在加利福尼亚州洛杉矶的山麓学院（Foothill College）任讲师，讲授半导体课程和针对初始工艺工程师的高级课程。他是《半导体技术词汇》（第三版）（Semiconductor Technology Glossary, Third Edition）、 《集成电路教程》（Integrated Circuits Text）、《安全**手册》（Safety First Manual）和《芯片封装手册》（Chip Packaging Manual）的作者。他的书和培训教程被多家芯片制造商、产业供货商、学院和大学所采用。
Peter Van Zant 国际知名半导体专家，具有广阔的工艺工程、培训、咨询和写作方面的背景，他曾先后在IBM和德州仪器（TI）工作，之后再硅谷，又先后在美国国家半导体（National Semiconductor）和单片存储器（Monolithic Memories）公司任晶圆制造工艺工程和管理职位。他还曾在加利福尼亚州洛杉矶的山麓学院（Foothill College）任讲师，讲授半导体课程和针对初始工艺工程师的高级课程。他是《半导体技术词汇》（第三版）（Semiconductor Technology Glossary, Third Edition）、 《集成电路教程》（Integrated Circuits Text）、《安全**手册》（Safety First Manual）和《芯片封装手册》（Chip Packaging Manual）的作者。他的书和培训教程被多家芯片制造商、产业供货商、学院和大学所采用。
目录：
Contents
目录
Chapter 1?The Semiconductor Industry?半导体产业
1.1 Introduction?引言
1.2 Birth of an Industry?一个产业的诞生
1.3 The Solid-State Era?固态时代
1.4 Integrated Circuits (ICs)?集成电路
1.5 Process and Product Trends?工艺和产品趋势
1.5.1 Moore’s Law?摩尔定律
1.5.2 Decreasing Feature Size?特征图形尺寸的减小
1.5.3 Increasing Chip and Wafer Size?芯片和晶圆尺寸的增大
1.5.4 Reduction in Defect Density?缺陷密度的减小
1.5.5 Increase in Interconnection Levels?内部连线水平的提高
1.5.6 The Semiconductor Industry Association Roadmap?半导体产业协会的发展蓝图
1.5.7 Chip Cost?芯片成本
1.6 Industry Organization?半导体产业的构成
1.7 Stages of Manufacturing?生产阶段
1.8 Six Decades of Advances in Microchip Fabrication Processes?微芯片制造过程发展的60年
1.9 The Nano Era?纳米时代
Review Topics?习题
References?参考文献
Chapter 2?Properties of Semiconductor Materials and Chemicals?半导体材料和化学品的特性
2.1 Introduction?引言
2.2 Atomic Structure?原子结构
2.2.1 The Bohr Atom?玻尔原子
2.3 The Periodic Table of the Elements?元素周期表
2.4 Electrical Conduction?电传导
2.4.1 Conductors?导体
2.5 Dielectrics and Capacitors?绝缘体和电容器
2.5.1 Resistors?电阻器
2.6 Intrinsic Semiconductors?本征半导体
2.7 Doped Semiconductors?掺杂半导体
2.8 Electron and Hole Conduction?电子和空穴传导
2.8.1 Carrier Mobility?载流子迁移率
2.9 Semiconductor Production Materials?半导体生产材料
2.9.1 Germanium and Silicon?锗和硅
2.10?Semiconducting Compounds?半导体化合物
2.11?Silicon Germanium?锗化硅
2.12?Engineered Substrates?衬底工程
2.13?Ferroelectric Materials?铁电材料
2.14?Diamond Semiconductors?金刚石半导体
2.15?Process Chemicals?工艺化学品
2.15.1?Molecules, Compounds, and Mixtures?分子、 化合物和混合物
2.15.2?Ions?离子
2.16?States of Matter?物质的状态
2.16.1?Solids, Liquids, and Gases?固体、 液体和气体
2.16.2?Plasma State?等离子体
2.17?Properties of Matter?物质的性质
2.17.1?Temperature?温度
2.17.2?Density, Speci?c Gravity, and Vapor Density?密度、相对密度和蒸气密度
2.18?Pressure and Vacuum?压力和真空
2.19?Acids, Alkalis, and Solvents?酸、 碱和溶剂
2.19.1?Acids and Alkalis?酸和碱
2.19.2?Solvents?溶剂
2.20?Chemical Purity and Cleanliness?化学纯化和清洗
2.20.1?Safety Issues?安全问题
2.20.2?The Material Safety Data Sheet?材料安全数据表
Review Topics?习题
References??参考文献
Chapter 3?Crystal Growth and Silicon Wafer Preparation?晶体生长与硅晶圆制备
3.1 Introduction?引言
3.2 Semiconductor Silicon Preparation?半导体硅制备
3.3 Crystalline Materials?晶体材料
3.3.1 Unit Cells?晶胞
3.3.2 Poly and Single Crystals?多晶和单晶
3.4 Crystal Orientation?晶体定向
3.5 Crystal Growth?晶体生长
3.5.1 Czochralski Method?直拉法（CZ）
3.5.2 Liquid-Encapsulated Czochralski?液体掩盖直拉法
3.5.3 Float Zone?区熔法
3.6 Crystal and Wafer Quality?晶体和晶圆质量
3.6.1 Point Defects?点缺陷
3.6.2 Dislocations?位错
3.6.3 Growth Defects?原生缺陷
3.6.4 Impurities?杂质
3.7 Wafer Preparation?晶圆制备
3.7.1 End Cropping?截断
3.7.2 Diameter Grinding?直径滚磨
3.7.3 Crystal Orientation, Conductivity, and Resistivity Check?晶体定向、电导率和电阻率检查
3.7.4 Grinding Orientation Indicators?滚磨定向指示
3.8 Wafer Slicing?切片
3.9 Wafer Marking?晶圆刻号
3.10?Rough Polish?磨片
3.11?Chemical Mechanical Polishing?化学机械抛光
3.12?Backside Processing?背面处理
3.13?Double-Sided Polishing?双面抛光
3.14?Edge Grinding and Polishing?边缘倒角和抛光
3.15?Wafer Evaluation?晶圆评估
3.16?Oxidation?氧化
3.17?Packaging?包装
3.17.1?Wafer Types and Uses?晶圆的类型和用途
3.17.2?Reclaim Wafers?晶圆回收
3.18?Engineered Wafers (Substrates)?工程化晶圆（衬底）
Review Topics?习题
References?参考文献
Chapter 4?Overview of Wafer Fabrication and Packaging?晶圆制造和封装概述
4.1 Introduction?引言
4.2 Goal of Wafer Fabrication?晶圆生产的目标
4.3 Wafer Terminology?晶圆术语
4.4 Chip Terminology?芯片术语
4.5 Basic Wafer-Fabrication Operations?晶圆生产的基础工艺
4.6 Layering?薄膜工艺
4.6.1 Patterning?图形化工艺
4.6.2 Circuit Design?电路设计
4.6.3 Reticle and Masks?光刻母版和掩模版
4.6.4 Basic Ten-Step Patterning Process?基本十步图形化工艺
4.6.5 Doping?掺杂
4.6.6 Heat Treatments?热处理
4.7 Example Fabrication Process?晶圆制造实例
4.8 Wafer Sort?晶圆中测
4.9 Packaging?集成电路的封装
4.10?Summary?小结
Review Topics?习题
References?参考文献
Chapter 5?Contamination Control?污染控制
5.1 Introduction?引言
5.1.1 The Problem?问题
5.1.2 Contamination-Caused Problems?污染引起的问题
5.2 Contamination Sources?污染源
5.2.1 General Sources?普通污染源
5.2.2 Air?空气
5.2.3 Clean Air Strategies?净化空气的方法
5.2.4 Cleanroom Workstation Strategy?洁净工作台法
5.2.5 Tunnel or Bay Concept?隧道/隔段型设计
5.2.6 Micro- and Mini-Environments?微局部环境
5.2.7 Temperature, Humidity, and Smog?温度、 湿度及烟雾
5.3 Cleanroom Construction?净化间的建设
5.3.1 Construction Materials?建造材料
5.3.2 Cleanroom Elements?净化间要素
5.3.3 Personnel-Generated Contamination?人员产生的污染
5.3.4 Process Water?工艺用水
5.3.5 Process Chemicals?工艺化学品
5.3.6 Equipment?设备
5.4 Cleanroom Materials and Supplies?净化间的材料与供给
5.5 Cleanroom Maintenance?净化间的维护
5.6 Wafer-Surface Cleaning?晶圆表面清洗
5.6.1 Particulate Removal?颗粒去除
5.6.2 Wafer Scrubbers?晶圆刷洗器
5.6.3 High-Pressure Water Cleaning?高压水清洗
5.6.4 Organic Residues?有机残留物
5.6.5 Inorganic Residues?无机残留物
5.6.6 Chemical-Cleaning Solutions?化学清洗方案
5.6.7 General Chemical Cleaning?常见的化学清洗
5.6.8 Oxide Layer Removal?氧化层的去除
5.6.9 Room Temperature and Ozonated Chemistries?室温和氧化的化学物质
5.6.10?Water Rinsing?水冲洗
5.6.11?Drying Techniques?烘干技术
5.6.12?Contamination Detection?污染检测
Review Topics?习题
References?参考文献
Chapter 6?Productivity and Process Yields?生产能力和工艺良品率
6.1 Overview?引言
6.2 Yield Measurement Points?良品率测量点
6.3 Accumulative Wafer-Fabrication Yield?累积晶圆生产良品率
6.4 Wafer-Fabrication Yield Limiters?晶圆生产良品率的制约因素
6.4.1 Number of Process Steps?工艺制程步骤的数量
6.4.2 Wafer Breakage and Warping?晶圆破碎和弯曲
6.4.3 Process Variation?工艺制程变异
6.4.4 Mask Defects?光刻掩模版缺陷
6.4.5 Wafer-Sort Yield Factors?晶圆电测良品率要素
6.4.6 Wafer Diameter and Edge Die?晶圆直径和边缘芯片
6.4.7 Wafer Diameter and Die Size?晶圆直径和芯片尺寸
6.4.8 Wafer Diameter and Crystal Defects?晶圆直径和晶体缺陷
6.4.9 Wafer Diameter and Process Variations?晶圆直径和工艺制程变异
6.4.10?Die Area and Defect Density?芯片面积和缺陷密度
6.4.11?Circuit Density and Defect Density?电路密度和缺陷密度
6.4.12?Number of Process Steps?工艺制程步骤的数量
6.4.13?Feature Size and Defect Size?特征工艺尺寸和缺陷尺寸
6.4.14?Process Cycle Time?工艺制程周期
6.4.15?Wafer-Sort Yield Formulas?晶圆中测良品率公式
6.5 Assembly and Final Test Yields?封装和*终测试良品率
6.6 Overall Process Yields?整体工艺良品率
Review Topics?习题
References?参考文献
Chapter 7?Oxidation?氧化
7.1 Introduction?引言
7.2 Silicon Dioxide Layer Uses?二氧化硅层的用途
7.2.1 Surface Passivation?表面钝化
7.2.2 Doping Barrier?掺杂阻挡层
7.2.3 Surface Dielectric?表面绝缘体
7.2.4 Device Dielectric (MOS Gates)?器件绝缘体（MOS栅）
7.2.5 Device Oxide Thicknesses?器件氧化物的厚度
7.3 Thermal Oxidation Mechanisms?热氧化机制
7.3.1 Influences on the Oxidation Rate?氧化率的影响
7.3.2 Thermal Oxidation Methods?热氧化方法
7.3.3 Horizontal Tube Furnaces?水平管式反应炉
7.3.4 Temperature Control System?温度控制系统
7.3.5 Source Cabinet?气体柜
7.3.6 Vertical Tube Furnaces?垂直式反应炉
7.3.7 Rapid Thermal Processing?快速热处理（RTP）
7.3.8 High-Pressure Oxidation?高压氧化
7.3.9 Oxidant Sources?氧化源
7.4 Oxidation Processes?氧化工艺
7.4.1 Preoxidation Wafer Cleaning?氧化前晶圆的清洗
7.5 Postoxidation Evaluation?氧化后评估
7.5.1 Surface Inspection?表面检测
7.5.2 Oxide Thickness?氧化膜厚度
7.5.3 Oxide and Furnace Cleanliness?氧化膜和炉管清洗
7.5.4 Thermal Nitridation?热氮化
Review Topics?习题
References?参考文献
Chapter 8?The Ten-Step Patterning Process—Surface Preparation to Exposure?
??????十步图形化工艺流程——从表面制备到曝光
8.1 Introduction?引言
8.2 Overview of the Photomasking Process?光刻工艺概述
8.3 Ten-Step Process?光刻十步法工艺过程
8.4 Basic Photoresist Chemistry?基本的光刻胶化学
8.4.1 Photoresist?光刻胶
8.5 Photoresist Performance Factors?光刻胶性能的要素
8.5.1 Resolution Capability?分辨率
8.5.2 Adhesion Capability?黏结能力
8.5.3 Process Latitude?工艺宽容度
8.5.4 Pinholes?针孔
8.5.5 Particle and Contamination Levels?微粒和污染水平
8.5.6 Step Coverage?台阶覆盖度
8.5.7 Thermal Flow?热流程
8.5.8 Comparison of Positive and Negative Resists?正胶和负胶的比较
8.6 Physical Properties of Photoresists?光刻胶的物理属性
8.6.1 Solids Content?固体含量
8.6.2 Viscosity?黏度
8.6.3 Surface Tension?表面张力
8.6.4 Index of Refraction?折射系数
8.6.5 Storage and Control of Photoresists?光刻胶的存储和控制
8.6.6 Light and Heat Sensitivity?光和热敏感度
8.6.7 Viscosity Sensitivity?黏性敏感度
8.6.8 Shelf Life?保存期
8.6.9 Cleanliness?清洁度
8.7 Photomasking Processes—Surface Preparation to Exposure?光刻工艺：从表面制备到曝光
8.8 Surface Preparation?表面制备
8.8.1 Particle Removal?微粒清除
8.8.2 Dehydration Baking?脱水烘焙
8.8.3 Wafer Priming?晶圆涂底胶
8.8.4 Spin Priming?旋转式涂底胶
8.8.5 Vapor Priming?蒸气式涂底胶
8.9 Photoresist Application (Spinning)?涂光刻胶（旋转式）
8.9.1 The Static Dispense Spin Process?静态涂胶工艺
8.9.2 Dynamic Dispense?动态喷洒
8.9.3 Moving-Arm Dispensing?移动手臂喷洒
8.9.4 Manual Spinners?手动旋转器
8.9.5 Automatic Spinners?自动旋转器
8.9.6 Edge Bead Removal?边缘堆积去除
8.9.7 Backside Coating?背面涂胶
8.10?Soft Bake?软烘焙
8.10.1?Convection Ovens?对流烘箱
8.10.2?Manual Hot Plates?手工热板
8.10.3?In-Line, Single-Wafer Hot Plates?内置式单片晶圆热板
8.10.4?Moving-Belt Hot Plates?移动带式热板
8.10.5?Moving-Belt Infrared Ovens?移动带式红外烘箱
8.10.6?Microwave Baking?微波烘焙
8.10.7?Vacuum Baking?真空烘焙
8.11?Alignment and Exposure?对准和曝光
8.11.1?Alignment and Exposure Systems?对准系统的性能
8.11.2?Exposure Sources?曝光光源
8.11.3?Alignment Criteria?对准法则
8.11.4?Aligner Types?光刻机的分类
8.11.5?Postexposure Bake?曝光后烘焙
8.12?Advanced Lithography?先进的光刻
Review Topics?习题
References?参考文献
Chapter 9?The Ten-Step Patterning Process—Developing to Final Inspection?
????? 十步图形化工艺流程——从显影到*终检验
9.1 Introduction?引言
9.1.1 Development?显影
9.1.2 Positive Resist Development?正光刻胶显影
9.1.3 Negative Resist Development?负光刻胶显影
9.1.4 Wet Development Processes?湿法显影
9.1.5 Dry (or Plasma) Development?干法（或等离子体）显影
9.2 Hard Bake?硬烘焙
9.2.1 Hard-Bake Methods?硬烘焙的方法
9.2.2 Hard-Bake Process?硬烘焙工艺
9.2.3 Develop Inspect?显影检验
9.2.4 Develop Inspect Reject Categories?显影检验拒收分类
9.2.5 Develop Inspect Methods?显影检验的方法
9.2.6 Causes for Rejecting at the Develop Inspection Stage?在显影检验阶段拒收的原因
9.3 Etch?刻蚀
9.4 Wet Etching?湿法刻蚀
9.4.1 Etch Goals and Issues?刻蚀的目的和问题
9.4.2 Incomplete Etch?不完全刻蚀
9.4.3 Overetch and Undercutting?过刻蚀和钻蚀
9.4.4 Selectivity?选择比
9.4.5 Wet-Spray Etching?湿法喷射刻蚀
9.4.6 Silicon Wet Etching?硅湿法刻蚀
9.4.7 Silicon Dioxide Wet Etching?二氧化硅湿法刻蚀
9.4.8 Aluminum-Film Wet Etching?铝膜湿法刻蚀
9.4.9 Deposited-Oxide Wet Etching?淀积氧化物湿法刻蚀
9.4.10?Silicon Nitride Wet Etching?氮化硅湿法刻蚀
9.4.11?Vapor Etching?蒸气刻蚀
9.5 Dry Etch?干法刻蚀
9.5.1 Plasma Etching?等离子体刻蚀
9.5.2 Etch Rate?刻蚀率
9.5.3 Radiation Damage?辐射损伤
9.5.4 Selectivity?选择比
9.5.5 Ion-Beam Etching?离子束刻蚀
9.5.6 Reactive Ion Etching?反应离子刻蚀
9.6 Resist Effects in Dry Etching?干法刻蚀中光刻胶的影响
9.7 Resist Stripping?光刻胶的去除
9.7.1 Wet Chemical Stripping of Nonmetallized Surfaces?无金属表面的湿法去除
9.7.2 Wet Chemical Stripping of Metallized Surfaces?有金属表面的湿法化学去除
9.7.3 Dry Stripping?干法去胶
9.7.4 Post-Ion Implant and Plasma Etch Stripping?离子注入后和等离子体去胶
9.8 New Stripping Challenges?去胶的新挑战
9.9 Final Inspection?*终目检
9.10?Mask Making?掩模版的制作
9.11?Summary?小结
Review Topics?习题
References?参考文献
Chapter10?Next Generation Lithography?下一代光刻技术
10.1?Introduction?引言
10.2?Challenges of Next Generation Lithography?下一代光刻工艺的挑战
10.2.1?High-Pressure Mercury Lamp Sources?高压汞灯源
10.2.2?Excimer Lasers?受激准分子激光器
10.2.3?Extreme Ultraviolet?极紫外
10.2.4?X-Rays?X射线
10.2.5?Electron Beam or Direct Writing?电子束或直写
10.2.6?Numerical Aperture of a Lens?镜头的数值孔径
10.3?Other Exposure Issues?其他曝光问题
10.3.1?Variable Numerical Aperture Lenses?可变数值孔径透镜
10.3.2?Immersion Exposure System?浸没式曝光系统
10.3.3?Amplified Resist?放大光刻胶
10.3.4?Contrast Effects?反差效应
10.4?Other Resolution Challenges and Solutions?其他解决方案及其挑战
10.4.1?Off-Axis Illumination?离轴光线
10.4.2?Lens Issues and Re?ection Systems?透镜问题和反射系统
10.4.3?Phase-Shift Masks?相移掩模版（PSM）
10.4.4?Optical Proximity Corrected or Optical Process Correction?光学临近修正或光学工艺修正
10.4.5?Annular-Ring Illumination?环孔照射
10.4.6?Pellicles?掩模版贴膜
10.5?Surface Problems?晶圆表面问题
10.5.1?Resist Light Scattering?光刻胶的光散射现象
10.5.2 Subsurface Re?ectivity?光刻胶内部的光反射现象
10.6 Antire?ective Coatings?防反射涂层
10.6.1 Standing Waves?驻波
10.6.2 Planarization?平坦化
10.7 Photoresist Process Advances?高级光刻胶工艺
10.7.1 Multilayer Resist or Surface Imaging?多层光刻胶或表面成像
10.7.2??Silylation or DESIRE Process?硅烷化反应或DESIRE工艺
10.7.3??Polyimide Planarization Layers?聚酰亚胺平坦化层
10.7.4??Etchback Planarization?反刻平坦化
10.7.5??Dual-Damascene Process?双大马士革工艺
10.7.6??Chemical Mechanical Polishing?化学机械抛光
10.7.7??CMP Polishing Pads?化学机械抛光抛光垫
10.7.8??Slurry?磨料浆
10.7.9??Polishing Rates?抛光速度
10.7.10?Planarity?平整性
10.7.11?Post-CMP Clean?化学机械抛光后的清洁
10.7.12?CMP Tools?化学机械抛光设备
10.7.13?CMP Summary?化学机械抛光小结
10.7.14?Re?ow?回流
10.7.15?Image Reversal?图形反转
10.7.16?Contrast Enhancement Layers?反差增强层
10.7.17?Dyed Resists?染色光刻胶
10.8 Improving Etch De?nition?改进刻蚀工艺
10.8.1 Lift-Off Process?剥离工艺
10.9 Self-Aligned Structures?自对准结构
10.10?Etch Pro?le Control?刻蚀轮廓控制
Review Topics?习题
References?参考文献
Chapter 11?Doping?掺杂
11.1 Introduction?引言
11.2 The Diffusion Concept?扩散的概念
11.3 Formation of a Doped Region and Junction?扩散形成的掺杂区和结
11.3.1 The N-P Junction?NP结
11.3.2 Doping Process Goals?掺杂工艺的目的
11.3.3 Graphical Representation of Junctions?结的图形表示
11.3.4 Concentration versus Depth Graphs?浓度随深度变化的曲线
11.3.5 Lateral Diffusion?横向扩散
11.3.6 Same-Type Doping?同型掺杂
11.4 Diffusion Process Steps?扩散工艺的步骤
11.5 Deposition?淀积
11.5.1 Dopant Sources?扩散源
11.6 Drive-In Oxidation?推进氧化
11.6.1 Oxidation Effects?氧化的影响
11.7 Introduction to Ion Implantation?离子注入简介
11.8 Concept of Ion Implantation?离子注入的概念
11.9 Ion-Implantation System?离子注入系统
11.9.1 Implant Species Sources?离子注入源
11.9.2 Ionization Chamber?离化反应室
11.9.3 Mass Analyzing or Ion Selection?质谱分析或离子选择
11.9.4 Acceleration Tube?加速管
11.9.5 Wafer Charging?晶圆电荷积累
11.9.6 Beam Focus?束流聚焦
11.9.7 Neutral Beam Trap?束流中和
11.9.8 Beam Scanning?束流扫描
11.9.9 End Station and Target Chamber?终端和靶室
11.9.10?Ion-Implant Masks?离子注入掩模
11.10?Dopant Concentration in Implanted Regions?离子注入区域的杂质浓度
11.10.1?Crystal Damage?晶体损伤
11.10.2?Annealing and Dopant Activation?退火和杂质激活
11.10.3?Channeling?沟道效应
11.11?Evaluation of Implanted Layers?离子注入层的评估
11.12?Uses of Ion Implantation?离子注入的应用
11.13?The Future of Doping?掺杂前景展望
Review Topics?习题
References?参考文献
Chapter 12?Layer Deposition?薄膜淀积
12.1 Introduction?引言
12.1.1 Film Parameters?薄膜的参数
12.2 Chemical Vapor Deposition Basics?化学气相淀积基础
12.2.1 Basic CVD System Components?基本CVD系统构成
12.3 CVD Process Steps?CVD的工艺步骤
12.4 CVD System Types?CVD系统分类
12.5 Atmospheric-Pressure CVD Systems?常压CVD系统
12.5.1 Horizontal-Tube Induction-Heated APCVD?水平炉管热感应式APCVD
12.5.2 Barrel Radiant-Induction-Heated APCVD?桶式辐射感应加热APCVD
12.5.3 Pancake Induction-Heated APCVD?饼式热感应APCVD
12.5.4 Continuous Conduction-Heated APCVD?连续传导加热APCVD
12.5.5 Horizontal Conduction-Heated APCVD?水平热传导APCVD
12.6 Low-Pressure Chemical Vapor Deposition?低压化学气相淀积（LPCVD）
12.6.1 Horizontal Conduction-Convection-Heated LPCVD?水平对流热传导LPCVD
12.6.2 Ultra-High Vacuum CVD?超高真空CVD
12.6.3 Plasma-Enhanced CVD (PECVD)?增强型等离子体CVD
12.6.4 High-Density Plasma CVD?高密度等离子体CVD
12.7 Atomic Layer Deposition?原子层淀积
12.8 Vapor-Phase Epitaxy?气相外延
12.9 Molecular Beam Epitaxy?分子束外延
12.10?Metalorganic CVD?金属有机物CVD
12.11?Deposited Films?淀积膜
12.12?Deposited Semiconductors?淀积的半导体膜
12.13?Epitaxial Silicon?外延硅
12.14?Polysilicon and Amorphous Silicon Deposition?多晶硅和非晶硅淀积
12.15?SOS and SOI?SOS和SOI
12.16?Gallium Arsenide on Silicon?在硅上生长砷化镓
12.17?Insulators and Dielectrics?绝缘体和绝缘介质
12.17.1 Silicon Dioxide?二氧化硅
12.17.2 Doped Silicon Dioxide?掺杂的二氧化硅
12.17.3 Silicon Nitride?氮化硅
12.17.4 High-k and Low-k Dielectrics?高k和低k介质
12.18?Conductors?导体
Review Topics?习题
References?参考文献
Chapter 13?Metallization?金属化
13.1 Introduction?引言
13.2 Deposition Methods?淀积方法
13.3 Single-Layer Metal Systems?单层金属
13.4 Multilevel Metal Schemes?多层金属设计
13.5 Conductors Materials?导体材料
13.5.1 Aluminum?铝
13.5.2 Aluminum-Silicon Alloys?铝硅合金
13.5.3 Aluminum-Copper Alloy?铝铜合金
13.5.4 Barrier Metals?阻挡层金属
13.5.5 Refractory Metals and Refractory Metal Silicides?难熔金属和难熔金属硅化物
13.6 Plugs?金属塞
13.7 Sputter Deposition?溅射淀积
13.7.1 Copper Dual-Damascene Process?双大马士革铜工艺
13.7.2 Low-k Dielectric Materials?低k介质材料
13.7.3 The Dual-Damascene Copper Process?双大马士革铜工艺
13.7.4 Barrier or Liner Deposition?阻挡层或衬垫层
13.7.5 Seed Deposition?种籽层
13.8 Electrochemical Plating?电化学镀膜
13.9 Chemical-Mechanical Processing?化学机械工艺
13.10?CVD Metal Deposition?CVD金属淀积
13.10.1?Doped Polysilicon?掺杂多晶硅
13.10.2?CVD Refractory Deposition?CVD难熔金属淀积
13.11?Metal-Film Uses?金属薄膜的用途
13.11.1?MOS Gate and Capacitor Electrodes?MOS栅极和电容器极板
13.11.2?Backside Metallization?背面金属化
13.12?Vacuum Systems?真空系统
13.12.1?Dry Mechanical Pumps?干机械泵
13.12.2?Turbomolecular Hi-Vac Pumps?涡轮分子高真空泵
Review Topics?习题
References?参考文献
Chapter 14?Process and Device Evaluation?工艺和器件的评估
14.1 Introduction?引言
14.2 Wafer Electrical Measurements?晶圆的电特性测量
14.2.1 Resistance and Resistivity?电阻和电阻率
14.2.2 Resistivity Measurements?电阻率的测量
14.2.3 Four-Point Probe?四探针测试仪
14.3 Process and Device Evaluation?工艺和器件评估方法
14.3.1 Sheet Resistance?方块电阻
14.3.2 Four-Point Probe Thickness Measurement?四探针测试仪测量厚度
14.3.3 Concentration or Depth Pro?le?掺杂浓度或深度形貌
14.3.4 Secondary Ion Mass Spectrometry?二次离子质谱法
14.3.5 Optically Modulated Optical Reflection (Thermawave)?光调制光反射（热波）
14.4 Physical Measurement Methods?物理测试方法
14.5 Layer Thickness Measurements?层厚的测量
14.5.1 Color?颜色
14.5.2 Spectrophotometers or Re?ectometry?分光光度计或反射计
14.5.3 Ellipsometers?椭偏仪
14.5.4 Stylus (Surface Pro?lometers)?触针（表面形貌仪）
14.5.5 Optical Profilometer?光学形貌仪
14.5.6 Photoacoustic?光声法
14.5.7 Four-Point Probe?四探针
14.5.8 Ultra-Thin MOSFET Gate Thickness?超薄MOS场效应晶体管栅厚度
14.6 Gate Oxide Integrity Electrical Measurement?栅氧化层完整性电学测量
14.7 Junction Depth?结深
14.7.1 Groove and Stain?凹槽和染色
14.7.2 Scanning Electron Microscope Thickness Measurement?扫描电镜厚度测量
14.7.3 Spreading Resistance Probe?扩展电阻测试法
14.7.4 Secondary Ion Mass Spectrometry?二次离子质谱法
14.7.5 Scanning Capacitance Microscopy?扫描电容显微镜
14.7.6 Carrier Illumination junction Depth?载流子激发结深
14.7.7 Critical Dimensions and Line-Width Measurements?关键尺寸和线宽测量
14.7.8 Optical Image-Shearing Dimension Measurement?光学图像剪切尺寸测量
14.7.9 Shape Metrology and Optical Critical Dimension?图形度量衡学和光学关键尺寸
14.8 Contamination and Defect Detection?污染物和缺陷检测
14.8.1 1×Visual Surface Inspection Techniques?1×直观表面检测技术
14.8.2 1×Collimated Light?1×平行光
14.8.3 1×Ultraviolet?1×紫外线
14.8.4 Microscope Techniques?显微镜技术
14.8.5 Automated In-Line Defect Inspection Systems?自动在线缺陷检测系统
14.9 General Surface Characterization?总体表面特征
14.9.1 Atomic Force Microscopy?原子力显微镜
14.9.2 Scattrometry?散射仪
14.10?Contamination Identi?cation?污染认定
14.10.1?Auger Electron Spectroscopy?俄歇电子谱
14.10.2?Electron Spectroscope for Chemical Analysis?用于化学分析的电子分光镜
14.10.3?Time of Flight Secondary Ion Mass Spectrometry?飞行时间二次离子质谱法
14.10.4?Evaluation of Stack Thickness and Composition?堆叠厚度和成分的评估
14.11?Device Electrical Measurements?器件电学测量
14.11.1?Equipment?设备
14.11.2?Resistors?电阻器
14.11.3?Diodes?二极管
14.11.4?Bipolar Transistors?双极型晶体管
14.11.5?MOS Transistors?MOS晶体管
14.11.6?Capacitance-Voltage Profiling?电容–电压曲线
14.11.7?Device Failure Analysis-Emission Microscopy?器件失效分析–发射显微镜
Review Topics?习题
References?参考文献
Chapter 15?The Business of Wafer Fabrication?晶圆制造中的商业因素
15.1 Introduction?引言
15.1.1 Moore’s Law and the New Wafer-Fabrication Business?摩尔定律和新晶圆制造商业
15.2 Wafer-Fabrication Costs?晶圆制造的成本
15.2.1 Overhead?一般管理费用
15.2.2 Materials?材料
15.2.3 Equipment?设备
15.2.4 Labor?劳动力
15.2.5 Production Cost Factors?生产成本因素
15.2.6 Yield?良品率
15.2.7 Yield Improvements?良品率的提高
15.2.8 Yield and Productivity?良品率和生产率
15.2.9 Increasing Wafer Diameters?增大晶圆直径
15.2.10?Book-to-Bill Ratio?账面–单据（book-to-bill）比率
15.2.11?Cost of Ownership?拥有成本
15.3 Automation?自动化
15.3.1 Process Automation?工艺自动化
15.3.2 Wafer-Loading Automation?晶圆装载自动化
15.3.3 Clustering?集簇
15.3.4 Wafer-Delivery Automation?晶圆传送自动化
15.3.5 Closed-Loop Control-System Automation?闭环控制系统自动化
15.4 Factory-Level Automation?工厂层次的自动化
15.5 Equipment Standards?设备标准
15.5.1 Fab Floor Layout?芯片厂的地面布局
15.5.2 Batch versus Single-Wafer Processing?批量和单晶圆工艺
15.5.3 Green Fabs?绿色芯片厂
15.6 Statistical Process Control?统计制程控制
15.7 Inventory Control?库存控制
15.7.1 Just-in-Time Inventory Control?及时库存控制
15.8 Quality Control and Certi?cation—ISO 9000?质量控制和ISO 9000认证
15.9 Line Organization?生产线组织架构
Review Topics?习题
References?参考文献
Chapter 16?Introduction to Devices and Integrated Circuit Formation?器件和集成电路组成的介绍
16.1 Introduction?引言
16.2 Semiconductor-Device Formation?半导体器件的形成
16.2.1 Resistors?电阻器
16.2.2 Capacitors?电容器
16.2.3 Diodes?二极管
16.2.4 Transistors?晶体管
16.2.5 Field-Effect Transistors?场效应晶体管（F
定价：109.0
ISBN：9787121404986
作者：彼得·范·赞特
版次：第1版
出版时间：2021-02
内容提要：
本书是一本介绍半导体集成电路和器件制造技术的专业书， 在半导体领域享有很高的声誉。本书的讨论范围包括半导体工艺的每个阶段： 从原材料的制备到封装、 测试和成品运输， 以及传统的和现代的工艺。全书提供了详细的插图和实例， 并辅以小结和习题， 以及内容丰富的术语表。第六版修订了微芯片制造领域的新进展， 讨论了用于图形化、 掺杂和薄膜步骤的先进工艺和尖端技术， 使隐含在复杂的现代半导体制造材料与工艺中的物理、 化学和电子的基础信息更易理解。本书的主要特点是避开了复杂的数学问题介绍工艺技术内容， 并加入了半导体业界的新成果， 可以使读者了解工艺技术发展的趋势。
作者简介：
Peter Van Zant 国际知名半导体专家，具有广阔的工艺工程、培训、咨询和写作方面的背景，他曾先后在IBM和德州仪器（TI）工作，之后再硅谷，又先后在美国国家半导体（National Semiconductor）和单片存储器（Monolithic Memories）公司任晶圆制造工艺工程和管理职位。他还曾在加利福尼亚州洛杉矶的山麓学院（Foothill College）任讲师，讲授半导体课程和针对初始工艺工程师的高级课程。他是《半导体技术词汇》（第三版）（Semiconductor Technology Glossary, Third Edition）、 《集成电路教程》（Integrated Circuits Text）、《安全**手册》（Safety First Manual）和《芯片封装手册》（Chip Packaging Manual）的作者。他的书和培训教程被多家芯片制造商、产业供货商、学院和大学所采用。
Peter Van Zant 国际知名半导体专家，具有广阔的工艺工程、培训、咨询和写作方面的背景，他曾先后在IBM和德州仪器（TI）工作，之后再硅谷，又先后在美国国家半导体（National Semiconductor）和单片存储器（Monolithic Memories）公司任晶圆制造工艺工程和管理职位。他还曾在加利福尼亚州洛杉矶的山麓学院（Foothill College）任讲师，讲授半导体课程和针对初始工艺工程师的高级课程。他是《半导体技术词汇》（第三版）（Semiconductor Technology Glossary, Third Edition）、 《集成电路教程》（Integrated Circuits Text）、《安全**手册》（Safety First Manual）和《芯片封装手册》（Chip Packaging Manual）的作者。他的书和培训教程被多家芯片制造商、产业供货商、学院和大学所采用。
目录：
Contents
目录
Chapter 1?The Semiconductor Industry?半导体产业
1.1 Introduction?引言
1.2 Birth of an Industry?一个产业的诞生
1.3 The Solid-State Era?固态时代
1.4 Integrated Circuits (ICs)?集成电路
1.5 Process and Product Trends?工艺和产品趋势
1.5.1 Moore’s Law?摩尔定律
1.5.2 Decreasing Feature Size?特征图形尺寸的减小
1.5.3 Increasing Chip and Wafer Size?芯片和晶圆尺寸的增大
1.5.4 Reduction in Defect Density?缺陷密度的减小
1.5.5 Increase in Interconnection Levels?内部连线水平的提高
1.5.6 The Semiconductor Industry Association Roadmap?半导体产业协会的发展蓝图
1.5.7 Chip Cost?芯片成本
1.6 Industry Organization?半导体产业的构成
1.7 Stages of Manufacturing?生产阶段
1.8 Six Decades of Advances in Microchip Fabrication Processes?微芯片制造过程发展的60年
1.9 The Nano Era?纳米时代
Review Topics?习题
References?参考文献
Chapter 2?Properties of Semiconductor Materials and Chemicals?半导体材料和化学品的特性
2.1 Introduction?引言
2.2 Atomic Structure?原子结构
2.2.1 The Bohr Atom?玻尔原子
2.3 The Periodic Table of the Elements?元素周期表
2.4 Electrical Conduction?电传导
2.4.1 Conductors?导体
2.5 Dielectrics and Capacitors?绝缘体和电容器
2.5.1 Resistors?电阻器
2.6 Intrinsic Semiconductors?本征半导体
2.7 Doped Semiconductors?掺杂半导体
2.8 Electron and Hole Conduction?电子和空穴传导
2.8.1 Carrier Mobility?载流子迁移率
2.9 Semiconductor Production Materials?半导体生产材料
2.9.1 Germanium and Silicon?锗和硅
2.10?Semiconducting Compounds?半导体化合物
2.11?Silicon Germanium?锗化硅
2.12?Engineered Substrates?衬底工程
2.13?Ferroelectric Materials?铁电材料
2.14?Diamond Semiconductors?金刚石半导体
2.15?Process Chemicals?工艺化学品
2.15.1?Molecules, Compounds, and Mixtures?分子、 化合物和混合物
2.15.2?Ions?离子
2.16?States of Matter?物质的状态
2.16.1?Solids, Liquids, and Gases?固体、 液体和气体
2.16.2?Plasma State?等离子体
2.17?Properties of Matter?物质的性质
2.17.1?Temperature?温度
2.17.2?Density, Speci?c Gravity, and Vapor Density?密度、相对密度和蒸气密度
2.18?Pressure and Vacuum?压力和真空
2.19?Acids, Alkalis, and Solvents?酸、 碱和溶剂
2.19.1?Acids and Alkalis?酸和碱
2.19.2?Solvents?溶剂
2.20?Chemical Purity and Cleanliness?化学纯化和清洗
2.20.1?Safety Issues?安全问题
2.20.2?The Material Safety Data Sheet?材料安全数据表
Review Topics?习题
References??参考文献
Chapter 3?Crystal Growth and Silicon Wafer Preparation?晶体生长与硅晶圆制备
3.1 Introduction?引言
3.2 Semiconductor Silicon Preparation?半导体硅制备
3.3 Crystalline Materials?晶体材料
3.3.1 Unit Cells?晶胞
3.3.2 Poly and Single Crystals?多晶和单晶
3.4 Crystal Orientation?晶体定向
3.5 Crystal Growth?晶体生长
3.5.1 Czochralski Method?直拉法（CZ）
3.5.2 Liquid-Encapsulated Czochralski?液体掩盖直拉法
3.5.3 Float Zone?区熔法
3.6 Crystal and Wafer Quality?晶体和晶圆质量
3.6.1 Point Defects?点缺陷
3.6.2 Dislocations?位错
3.6.3 Growth Defects?原生缺陷
3.6.4 Impurities?杂质
3.7 Wafer Preparation?晶圆制备
3.7.1 End Cropping?截断
3.7.2 Diameter Grinding?直径滚磨
3.7.3 Crystal Orientation, Conductivity, and Resistivity Check?晶体定向、电导率和电阻率检查
3.7.4 Grinding Orientation Indicators?滚磨定向指示
3.8 Wafer Slicing?切片
3.9 Wafer Marking?晶圆刻号
3.10?Rough Polish?磨片
3.11?Chemical Mechanical Polishing?化学机械抛光
3.12?Backside Processing?背面处理
3.13?Double-Sided Polishing?双面抛光
3.14?Edge Grinding and Polishing?边缘倒角和抛光
3.15?Wafer Evaluation?晶圆评估
3.16?Oxidation?氧化
3.17?Packaging?包装
3.17.1?Wafer Types and Uses?晶圆的类型和用途
3.17.2?Reclaim Wafers?晶圆回收
3.18?Engineered Wafers (Substrates)?工程化晶圆（衬底）
Review Topics?习题
References?参考文献
Chapter 4?Overview of Wafer Fabrication and Packaging?晶圆制造和封装概述
4.1 Introduction?引言
4.2 Goal of Wafer Fabrication?晶圆生产的目标
4.3 Wafer Terminology?晶圆术语
4.4 Chip Terminology?芯片术语
4.5 Basic Wafer-Fabrication Operations?晶圆生产的基础工艺
4.6 Layering?薄膜工艺
4.6.1 Patterning?图形化工艺
4.6.2 Circuit Design?电路设计
4.6.3 Reticle and Masks?光刻母版和掩模版
4.6.4 Basic Ten-Step Patterning Process?基本十步图形化工艺
4.6.5 Doping?掺杂
4.6.6 Heat Treatments?热处理
4.7 Example Fabrication Process?晶圆制造实例
4.8 Wafer Sort?晶圆中测
4.9 Packaging?集成电路的封装
4.10?Summary?小结
Review Topics?习题
References?参考文献
Chapter 5?Contamination Control?污染控制
5.1 Introduction?引言
5.1.1 The Problem?问题
5.1.2 Contamination-Caused Problems?污染引起的问题
5.2 Contamination Sources?污染源
5.2.1 General Sources?普通污染源
5.2.2 Air?空气
5.2.3 Clean Air Strategies?净化空气的方法
5.2.4 Cleanroom Workstation Strategy?洁净工作台法
5.2.5 Tunnel or Bay Concept?隧道/隔段型设计
5.2.6 Micro- and Mini-Environments?微局部环境
5.2.7 Temperature, Humidity, and Smog?温度、 湿度及烟雾
5.3 Cleanroom Construction?净化间的建设
5.3.1 Construction Materials?建造材料
5.3.2 Cleanroom Elements?净化间要素
5.3.3 Personnel-Generated Contamination?人员产生的污染
5.3.4 Process Water?工艺用水
5.3.5 Process Chemicals?工艺化学品
5.3.6 Equipment?设备
5.4 Cleanroom Materials and Supplies?净化间的材料与供给
5.5 Cleanroom Maintenance?净化间的维护
5.6 Wafer-Surface Cleaning?晶圆表面清洗
5.6.1 Particulate Removal?颗粒去除
5.6.2 Wafer Scrubbers?晶圆刷洗器
5.6.3 High-Pressure Water Cleaning?高压水清洗
5.6.4 Organic Residues?有机残留物
5.6.5 Inorganic Residues?无机残留物
5.6.6 Chemical-Cleaning Solutions?化学清洗方案
5.6.7 General Chemical Cleaning?常见的化学清洗
5.6.8 Oxide Layer Removal?氧化层的去除
5.6.9 Room Temperature and Ozonated Chemistries?室温和氧化的化学物质
5.6.10?Water Rinsing?水冲洗
5.6.11?Drying Techniques?烘干技术
5.6.12?Contamination Detection?污染检测
Review Topics?习题
References?参考文献
Chapter 6?Productivity and Process Yields?生产能力和工艺良品率
6.1 Overview?引言
6.2 Yield Measurement Points?良品率测量点
6.3 Accumulative Wafer-Fabrication Yield?累积晶圆生产良品率
6.4 Wafer-Fabrication Yield Limiters?晶圆生产良品率的制约因素
6.4.1 Number of Process Steps?工艺制程步骤的数量
6.4.2 Wafer Breakage and Warping?晶圆破碎和弯曲
6.4.3 Process Variation?工艺制程变异
6.4.4 Mask Defects?光刻掩模版缺陷
6.4.5 Wafer-Sort Yield Factors?晶圆电测良品率要素
6.4.6 Wafer Diameter and Edge Die?晶圆直径和边缘芯片
6.4.7 Wafer Diameter and Die Size?晶圆直径和芯片尺寸
6.4.8 Wafer Diameter and Crystal Defects?晶圆直径和晶体缺陷
6.4.9 Wafer Diameter and Process Variations?晶圆直径和工艺制程变异
6.4.10?Die Area and Defect Density?芯片面积和缺陷密度
6.4.11?Circuit Density and Defect Density?电路密度和缺陷密度
6.4.12?Number of Process Steps?工艺制程步骤的数量
6.4.13?Feature Size and Defect Size?特征工艺尺寸和缺陷尺寸
6.4.14?Process Cycle Time?工艺制程周期
6.4.15?Wafer-Sort Yield Formulas?晶圆中测良品率公式
6.5 Assembly and Final Test Yields?封装和*终测试良品率
6.6 Overall Process Yields?整体工艺良品率
Review Topics?习题
References?参考文献
Chapter 7?Oxidation?氧化
7.1 Introduction?引言
7.2 Silicon Dioxide Layer Uses?二氧化硅层的用途
7.2.1 Surface Passivation?表面钝化
7.2.2 Doping Barrier?掺杂阻挡层
7.2.3 Surface Dielectric?表面绝缘体
7.2.4 Device Dielectric (MOS Gates)?器件绝缘体（MOS栅）
7.2.5 Device Oxide Thicknesses?器件氧化物的厚度
7.3 Thermal Oxidation Mechanisms?热氧化机制
7.3.1 Influences on the Oxidation Rate?氧化率的影响
7.3.2 Thermal Oxidation Methods?热氧化方法
7.3.3 Horizontal Tube Furnaces?水平管式反应炉
7.3.4 Temperature Control System?温度控制系统
7.3.5 Source Cabinet?气体柜
7.3.6 Vertical Tube Furnaces?垂直式反应炉
7.3.7 Rapid Thermal Processing?快速热处理（RTP）
7.3.8 High-Pressure Oxidation?高压氧化
7.3.9 Oxidant Sources?氧化源
7.4 Oxidation Processes?氧化工艺
7.4.1 Preoxidation Wafer Cleaning?氧化前晶圆的清洗
7.5 Postoxidation Evaluation?氧化后评估
7.5.1 Surface Inspection?表面检测
7.5.2 Oxide Thickness?氧化膜厚度
7.5.3 Oxide and Furnace Cleanliness?氧化膜和炉管清洗
7.5.4 Thermal Nitridation?热氮化
Review Topics?习题
References?参考文献
Chapter 8?The Ten-Step Patterning Process—Surface Preparation to Exposure?
??????十步图形化工艺流程——从表面制备到曝光
8.1 Introduction?引言
8.2 Overview of the Photomasking Process?光刻工艺概述
8.3 Ten-Step Process?光刻十步法工艺过程
8.4 Basic Photoresist Chemistry?基本的光刻胶化学
8.4.1 Photoresist?光刻胶
8.5 Photoresist Performance Factors?光刻胶性能的要素
8.5.1 Resolution Capability?分辨率
8.5.2 Adhesion Capability?黏结能力
8.5.3 Process Latitude?工艺宽容度
8.5.4 Pinholes?针孔
8.5.5 Particle and Contamination Levels?微粒和污染水平
8.5.6 Step Coverage?台阶覆盖度
8.5.7 Thermal Flow?热流程
8.5.8 Comparison of Positive and Negative Resists?正胶和负胶的比较
8.6 Physical Properties of Photoresists?光刻胶的物理属性
8.6.1 Solids Content?固体含量
8.6.2 Viscosity?黏度
8.6.3 Surface Tension?表面张力
8.6.4 Index of Refraction?折射系数
8.6.5 Storage and Control of Photoresists?光刻胶的存储和控制
8.6.6 Light and Heat Sensitivity?光和热敏感度
8.6.7 Viscosity Sensitivity?黏性敏感度
8.6.8 Shelf Life?保存期
8.6.9 Cleanliness?清洁度
8.7 Photomasking Processes—Surface Preparation to Exposure?光刻工艺：从表面制备到曝光
8.8 Surface Preparation?表面制备
8.8.1 Particle Removal?微粒清除
8.8.2 Dehydration Baking?脱水烘焙
8.8.3 Wafer Priming?晶圆涂底胶
8.8.4 Spin Priming?旋转式涂底胶
8.8.5 Vapor Priming?蒸气式涂底胶
8.9 Photoresist Application (Spinning)?涂光刻胶（旋转式）
8.9.1 The Static Dispense Spin Process?静态涂胶工艺
8.9.2 Dynamic Dispense?动态喷洒
8.9.3 Moving-Arm Dispensing?移动手臂喷洒
8.9.4 Manual Spinners?手动旋转器
8.9.5 Automatic Spinners?自动旋转器
8.9.6 Edge Bead Removal?边缘堆积去除
8.9.7 Backside Coating?背面涂胶
8.10?Soft Bake?软烘焙
8.10.1?Convection Ovens?对流烘箱
8.10.2?Manual Hot Plates?手工热板
8.10.3?In-Line, Single-Wafer Hot Plates?内置式单片晶圆热板
8.10.4?Moving-Belt Hot Plates?移动带式热板
8.10.5?Moving-Belt Infrared Ovens?移动带式红外烘箱
8.10.6?Microwave Baking?微波烘焙
8.10.7?Vacuum Baking?真空烘焙
8.11?Alignment and Exposure?对准和曝光
8.11.1?Alignment and Exposure Systems?对准系统的性能
8.11.2?Exposure Sources?曝光光源
8.11.3?Alignment Criteria?对准法则
8.11.4?Aligner Types?光刻机的分类
8.11.5?Postexposure Bake?曝光后烘焙
8.12?Advanced Lithography?先进的光刻
Review Topics?习题
References?参考文献
Chapter 9?The Ten-Step Patterning Process—Developing to Final Inspection?
????? 十步图形化工艺流程——从显影到*终检验
9.1 Introduction?引言
9.1.1 Development?显影
9.1.2 Positive Resist Development?正光刻胶显影
9.1.3 Negative Resist Development?负光刻胶显影
9.1.4 Wet Development Processes?湿法显影
9.1.5 Dry (or Plasma) Development?干法（或等离子体）显影
9.2 Hard Bake?硬烘焙
9.2.1 Hard-Bake Methods?硬烘焙的方法
9.2.2 Hard-Bake Process?硬烘焙工艺
9.2.3 Develop Inspect?显影检验
9.2.4 Develop Inspect Reject Categories?显影检验拒收分类
9.2.5 Develop Inspect Methods?显影检验的方法
9.2.6 Causes for Rejecting at the Develop Inspection Stage?在显影检验阶段拒收的原因
9.3 Etch?刻蚀
9.4 Wet Etching?湿法刻蚀
9.4.1 Etch Goals and Issues?刻蚀的目的和问题
9.4.2 Incomplete Etch?不完全刻蚀
9.4.3 Overetch and Undercutting?过刻蚀和钻蚀
9.4.4 Selectivity?选择比
9.4.5 Wet-Spray Etching?湿法喷射刻蚀
9.4.6 Silicon Wet Etching?硅湿法刻蚀
9.4.7 Silicon Dioxide Wet Etching?二氧化硅湿法刻蚀
9.4.8 Aluminum-Film Wet Etching?铝膜湿法刻蚀
9.4.9 Deposited-Oxide Wet Etching?淀积氧化物湿法刻蚀
9.4.10?Silicon Nitride Wet Etching?氮化硅湿法刻蚀
9.4.11?Vapor Etching?蒸气刻蚀
9.5 Dry Etch?干法刻蚀
9.5.1 Plasma Etching?等离子体刻蚀
9.5.2 Etch Rate?刻蚀率
9.5.3 Radiation Damage?辐射损伤
9.5.4 Selectivity?选择比
9.5.5 Ion-Beam Etching?离子束刻蚀
9.5.6 Reactive Ion Etching?反应离子刻蚀
9.6 Resist Effects in Dry Etching?干法刻蚀中光刻胶的影响
9.7 Resist Stripping?光刻胶的去除
9.7.1 Wet Chemical Stripping of Nonmetallized Surfaces?无金属表面的湿法去除
9.7.2 Wet Chemical Stripping of Metallized Surfaces?有金属表面的湿法化学去除
9.7.3 Dry Stripping?干法去胶
9.7.4 Post-Ion Implant and Plasma Etch Stripping?离子注入后和等离子体去胶
9.8 New Stripping Challenges?去胶的新挑战
9.9 Final Inspection?*终目检
9.10?Mask Making?掩模版的制作
9.11?Summary?小结
Review Topics?习题
References?参考文献
Chapter10?Next Generation Lithography?下一代光刻技术
10.1?Introduction?引言
10.2?Challenges of Next Generation Lithography?下一代光刻工艺的挑战
10.2.1?High-Pressure Mercury Lamp Sources?高压汞灯源
10.2.2?Excimer Lasers?受激准分子激光器
10.2.3?Extreme Ultraviolet?极紫外
10.2.4?X-Rays?X射线
10.2.5?Electron Beam or Direct Writing?电子束或直写
10.2.6?Numerical Aperture of a Lens?镜头的数值孔径
10.3?Other Exposure Issues?其他曝光问题
10.3.1?Variable Numerical Aperture Lenses?可变数值孔径透镜
10.3.2?Immersion Exposure System?浸没式曝光系统
10.3.3?Amplified Resist?放大光刻胶
10.3.4?Contrast Effects?反差效应
10.4?Other Resolution Challenges and Solutions?其他解决方案及其挑战
10.4.1?Off-Axis Illumination?离轴光线
10.4.2?Lens Issues and Re?ection Systems?透镜问题和反射系统
10.4.3?Phase-Shift Masks?相移掩模版（PSM）
10.4.4?Optical Proximity Corrected or Optical Process Correction?光学临近修正或光学工艺修正
10.4.5?Annular-Ring Illumination?环孔照射
10.4.6?Pellicles?掩模版贴膜
10.5?Surface Problems?晶圆表面问题
10.5.1?Resist Light Scattering?光刻胶的光散射现象
10.5.2 Subsurface Re?ectivity?光刻胶内部的光反射现象
10.6 Antire?ective Coatings?防反射涂层
10.6.1 Standing Waves?驻波
10.6.2 Planarization?平坦化
10.7 Photoresist Process Advances?高级光刻胶工艺
10.7.1 Multilayer Resist or Surface Imaging?多层光刻胶或表面成像
10.7.2??Silylation or DESIRE Process?硅烷化反应或DESIRE工艺
10.7.3??Polyimide Planarization Layers?聚酰亚胺平坦化层
10.7.4??Etchback Planarization?反刻平坦化
10.7.5??Dual-Damascene Process?双大马士革工艺
10.7.6??Chemical Mechanical Polishing?化学机械抛光
10.7.7??CMP Polishing Pads?化学机械抛光抛光垫
10.7.8??Slurry?磨料浆
10.7.9??Polishing Rates?抛光速度
10.7.10?Planarity?平整性
10.7.11?Post-CMP Clean?化学机械抛光后的清洁
10.7.12?CMP Tools?化学机械抛光设备
10.7.13?CMP Summary?化学机械抛光小结
10.7.14?Re?ow?回流
10.7.15?Image Reversal?图形反转
10.7.16?Contrast Enhancement Layers?反差增强层
10.7.17?Dyed Resists?染色光刻胶
10.8 Improving Etch De?nition?改进刻蚀工艺
10.8.1 Lift-Off Process?剥离工艺
10.9 Self-Aligned Structures?自对准结构
10.10?Etch Pro?le Control?刻蚀轮廓控制
Review Topics?习题
References?参考文献
Chapter 11?Doping?掺杂
11.1 Introduction?引言
11.2 The Diffusion Concept?扩散的概念
11.3 Formation of a Doped Region and Junction?扩散形成的掺杂区和结
11.3.1 The N-P Junction?NP结
11.3.2 Doping Process Goals?掺杂工艺的目的
11.3.3 Graphical Representation of Junctions?结的图形表示
11.3.4 Concentration versus Depth Graphs?浓度随深度变化的曲线
11.3.5 Lateral Diffusion?横向扩散
11.3.6 Same-Type Doping?同型掺杂
11.4 Diffusion Process Steps?扩散工艺的步骤
11.5 Deposition?淀积
11.5.1 Dopant Sources?扩散源
11.6 Drive-In Oxidation?推进氧化
11.6.1 Oxidation Effects?氧化的影响
11.7 Introduction to Ion Implantation?离子注入简介
11.8 Concept of Ion Implantation?离子注入的概念
11.9 Ion-Implantation System?离子注入系统
11.9.1 Implant Species Sources?离子注入源
11.9.2 Ionization Chamber?离化反应室
11.9.3 Mass Analyzing or Ion Selection?质谱分析或离子选择
11.9.4 Acceleration Tube?加速管
11.9.5 Wafer Charging?晶圆电荷积累
11.9.6 Beam Focus?束流聚焦
11.9.7 Neutral Beam Trap?束流中和
11.9.8 Beam Scanning?束流扫描
11.9.9 End Station and Target Chamber?终端和靶室
11.9.10?Ion-Implant Masks?离子注入掩模
11.10?Dopant Concentration in Implanted Regions?离子注入区域的杂质浓度
11.10.1?Crystal Damage?晶体损伤
11.10.2?Annealing and Dopant Activation?退火和杂质激活
11.10.3?Channeling?沟道效应
11.11?Evaluation of Implanted Layers?离子注入层的评估
11.12?Uses of Ion Implantation?离子注入的应用
11.13?The Future of Doping?掺杂前景展望
Review Topics?习题
References?参考文献
Chapter 12?Layer Deposition?薄膜淀积
12.1 Introduction?引言
12.1.1 Film Parameters?薄膜的参数
12.2 Chemical Vapor Deposition Basics?化学气相淀积基础
12.2.1 Basic CVD System Components?基本CVD系统构成
12.3 CVD Process Steps?CVD的工艺步骤
12.4 CVD System Types?CVD系统分类
12.5 Atmospheric-Pressure CVD Systems?常压CVD系统
12.5.1 Horizontal-Tube Induction-Heated APCVD?水平炉管热感应式APCVD
12.5.2 Barrel Radiant-Induction-Heated APCVD?桶式辐射感应加热APCVD
12.5.3 Pancake Induction-Heated APCVD?饼式热感应APCVD
12.5.4 Continuous Conduction-Heated APCVD?连续传导加热APCVD
12.5.5 Horizontal Conduction-Heated APCVD?水平热传导APCVD
12.6 Low-Pressure Chemical Vapor Deposition?低压化学气相淀积（LPCVD）
12.6.1 Horizontal Conduction-Convection-Heated LPCVD?水平对流热传导LPCVD
12.6.2 Ultra-High Vacuum CVD?超高真空CVD
12.6.3 Plasma-Enhanced CVD (PECVD)?增强型等离子体CVD
12.6.4 High-Density Plasma CVD?高密度等离子体CVD
12.7 Atomic Layer Deposition?原子层淀积
12.8 Vapor-Phase Epitaxy?气相外延
12.9 Molecular Beam Epitaxy?分子束外延
12.10?Metalorganic CVD?金属有机物CVD
12.11?Deposited Films?淀积膜
12.12?Deposited Semiconductors?淀积的半导体膜
12.13?Epitaxial Silicon?外延硅
12.14?Polysilicon and Amorphous Silicon Deposition?多晶硅和非晶硅淀积
12.15?SOS and SOI?SOS和SOI
12.16?Gallium Arsenide on Silicon?在硅上生长砷化镓
12.17?Insulators and Dielectrics?绝缘体和绝缘介质
12.17.1 Silicon Dioxide?二氧化硅
12.17.2 Doped Silicon Dioxide?掺杂的二氧化硅
12.17.3 Silicon Nitride?氮化硅
12.17.4 High-k and Low-k Dielectrics?高k和低k介质
12.18?Conductors?导体
Review Topics?习题
References?参考文献
Chapter 13?Metallization?金属化
13.1 Introduction?引言
13.2 Deposition Methods?淀积方法
13.3 Single-Layer Metal Systems?单层金属
13.4 Multilevel Metal Schemes?多层金属设计
13.5 Conductors Materials?导体材料
13.5.1 Aluminum?铝
13.5.2 Aluminum-Silicon Alloys?铝硅合金
13.5.3 Aluminum-Copper Alloy?铝铜合金
13.5.4 Barrier Metals?阻挡层金属
13.5.5 Refractory Metals and Refractory Metal Silicides?难熔金属和难熔金属硅化物
13.6 Plugs?金属塞
13.7 Sputter Deposition?溅射淀积
13.7.1 Copper Dual-Damascene Process?双大马士革铜工艺
13.7.2 Low-k Dielectric Materials?低k介质材料
13.7.3 The Dual-Damascene Copper Process?双大马士革铜工艺
13.7.4 Barrier or Liner Deposition?阻挡层或衬垫层
13.7.5 Seed Deposition?种籽层
13.8 Electrochemical Plating?电化学镀膜
13.9 Chemical-Mechanical Processing?化学机械工艺
13.10?CVD Metal Deposition?CVD金属淀积
13.10.1?Doped Polysilicon?掺杂多晶硅
13.10.2?CVD Refractory Deposition?CVD难熔金属淀积
13.11?Metal-Film Uses?金属薄膜的用途
13.11.1?MOS Gate and Capacitor Electrodes?MOS栅极和电容器极板
13.11.2?Backside Metallization?背面金属化
13.12?Vacuum Systems?真空系统
13.12.1?Dry Mechanical Pumps?干机械泵
13.12.2?Turbomolecular Hi-Vac Pumps?涡轮分子高真空泵
Review Topics?习题
References?参考文献
Chapter 14?Process and Device Evaluation?工艺和器件的评估
14.1 Introduction?引言
14.2 Wafer Electrical Measurements?晶圆的电特性测量
14.2.1 Resistance and Resistivity?电阻和电阻率
14.2.2 Resistivity Measurements?电阻率的测量
14.2.3 Four-Point Probe?四探针测试仪
14.3 Process and Device Evaluation?工艺和器件评估方法
14.3.1 Sheet Resistance?方块电阻
14.3.2 Four-Point Probe Thickness Measurement?四探针测试仪测量厚度
14.3.3 Concentration or Depth Pro?le?掺杂浓度或深度形貌
14.3.4 Secondary Ion Mass Spectrometry?二次离子质谱法
14.3.5 Optically Modulated Optical Reflection (Thermawave)?光调制光反射（热波）
14.4 Physical Measurement Methods?物理测试方法
14.5 Layer Thickness Measurements?层厚的测量
14.5.1 Color?颜色
14.5.2 Spectrophotometers or Re?ectometry?分光光度计或反射计
14.5.3 Ellipsometers?椭偏仪
14.5.4 Stylus (Surface Pro?lometers)?触针（表面形貌仪）
14.5.5 Optical Profilometer?光学形貌仪
14.5.6 Photoacoustic?光声法
14.5.7 Four-Point Probe?四探针
14.5.8 Ultra-Thin MOSFET Gate Thickness?超薄MOS场效应晶体管栅厚度
14.6 Gate Oxide Integrity Electrical Measurement?栅氧化层完整性电学测量
14.7 Junction Depth?结深
14.7.1 Groove and Stain?凹槽和染色
14.7.2 Scanning Electron Microscope Thickness Measurement?扫描电镜厚度测量
14.7.3 Spreading Resistance Probe?扩展电阻测试法
14.7.4 Secondary Ion Mass Spectrometry?二次离子质谱法
14.7.5 Scanning Capacitance Microscopy?扫描电容显微镜
14.7.6 Carrier Illumination junction Depth?载流子激发结深
14.7.7 Critical Dimensions and Line-Width Measurements?关键尺寸和线宽测量
14.7.8 Optical Image-Shearing Dimension Measurement?光学图像剪切尺寸测量
14.7.9 Shape Metrology and Optical Critical Dimension?图形度量衡学和光学关键尺寸
14.8 Contamination and Defect Detection?污染物和缺陷检测
14.8.1 1×Visual Surface Inspection Techniques?1×直观表面检测技术
14.8.2 1×Collimated Light?1×平行光
14.8.3 1×Ultraviolet?1×紫外线
14.8.4 Microscope Techniques?显微镜技术
14.8.5 Automated In-Line Defect Inspection Systems?自动在线缺陷检测系统
14.9 General Surface Characterization?总体表面特征
14.9.1 Atomic Force Microscopy?原子力显微镜
14.9.2 Scattrometry?散射仪
14.10?Contamination Identi?cation?污染认定
14.10.1?Auger Electron Spectroscopy?俄歇电子谱
14.10.2?Electron Spectroscope for Chemical Analysis?用于化学分析的电子分光镜
14.10.3?Time of Flight Secondary Ion Mass Spectrometry?飞行时间二次离子质谱法
14.10.4?Evaluation of Stack Thickness and Composition?堆叠厚度和成分的评估
14.11?Device Electrical Measurements?器件电学测量
14.11.1?Equipment?设备
14.11.2?Resistors?电阻器
14.11.3?Diodes?二极管
14.11.4?Bipolar Transistors?双极型晶体管
14.11.5?MOS Transistors?MOS晶体管
14.11.6?Capacitance-Voltage Profiling?电容–电压曲线
14.11.7?Device Failure Analysis-Emission Microscopy?器件失效分析–发射显微镜
Review Topics?习题
References?参考文献
Chapter 15?The Business of Wafer Fabrication?晶圆制造中的商业因素
15.1 Introduction?引言
15.1.1 Moore’s Law and the New Wafer-Fabrication Business?摩尔定律和新晶圆制造商业
15.2 Wafer-Fabrication Costs?晶圆制造的成本
15.2.1 Overhead?一般管理费用
15.2.2 Materials?材料
15.2.3 Equipment?设备
15.2.4 Labor?劳动力
15.2.5 Production Cost Factors?生产成本因素
15.2.6 Yield?良品率
15.2.7 Yield Improvements?良品率的提高
15.2.8 Yield and Productivity?良品率和生产率
15.2.9 Increasing Wafer Diameters?增大晶圆直径
15.2.10?Book-to-Bill Ratio?账面–单据（book-to-bill）比率
15.2.11?Cost of Ownership?拥有成本
15.3 Automation?自动化
15.3.1 Process Automation?工艺自动化
15.3.2 Wafer-Loading Automation?晶圆装载自动化
15.3.3 Clustering?集簇
15.3.4 Wafer-Delivery Automation?晶圆传送自动化
15.3.5 Closed-Loop Control-System Automation?闭环控制系统自动化
15.4 Factory-Level Automation?工厂层次的自动化
15.5 Equipment Standards?设备标准
15.5.1 Fab Floor Layout?芯片厂的地面布局
15.5.2 Batch versus Single-Wafer Processing?批量和单晶圆工艺
15.5.3 Green Fabs?绿色芯片厂
15.6 Statistical Process Control?统计制程控制
15.7 Inventory Control?库存控制
15.7.1 Just-in-Time Inventory Control?及时库存控制
15.8 Quality Control and Certi?cation—ISO 9000?质量控制和ISO 9000认证
15.9 Line Organization?生产线组织架构
Review Topics?习题
References?参考文献
Chapter 16?Introduction to Devices and Integrated Circuit Formation?器件和集成电路组成的介绍
16.1 Introduction?引言
16.2 Semiconductor-Device Formation?半导体器件的形成
16.2.1 Resistors?电阻器
16.2.2 Capacitors?电容器
16.2.3 Diodes?二极管
16.2.4 Transistors?晶体管
16.2.5 Field-Effect Transistors?场效应晶体管（F
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