本书是微电子与集成电路设计相关技术的专业英语教材，紧扣基本概念、基本理论和分析方法。全书共27讲，分为4部分：半导体物理基础，主要内容包括半导体概述、晶体结构、能带模型、平衡半导体、载流子输运、半导体中的非平衡过剩载流子；半导体器件，主要内容包括pn结、金属_半导体接触、异质结、双极晶体管、现代双极晶体管结构、MOSFET基础、MOSFET的非理想效应、先进的MOSFET器件；集成电路设计，主要内容包括集成电路简介、模拟集成电路设计、数字集成电路设计、半导体存储器、射频集成电路设计、仿真与验证；半导体技术与工艺，主要内容包括：半导体技术简介、双极技术和砷化镓数字逻辑工艺、CMOS工艺、可靠性等。本书提供两个附录半导体微波与功率器件和超越摩尔定律，可扫描书中二维码拓展阅读；配套电子课件、习题参考答案、部分课文录音、英文阅读材料译文等，请登录华信教育资源网注册下载。本书既可作为高等学校微电子、集成电路、电子及相关专业高年级本科生和研究生相关课程的教材，也可作为职业本科和高职高专相关课程的教材，还可供集成电路领域相关科研工作者和工程技术人员学习参考。李聪,博士、副教授、博士生导师，主要研究方向为新型半导体器件及电路研究。2008年在芬兰奥卢（oulu）大学访问研究，2011 年在欧洲微电子中心（IMEC）访问研究。2015年_2016年在美国佛罗里达大学（UF）访问研究。主持国家自然科学基金两项，参与多项国防科研项目，发表论文30余篇，专利5个。目　　录 Session 1　Introduction to Semiconductor11.1　What Is Semiconductor11.2　Classification of Semiconductor3Reading Materials3Session 2　Crystal Structure92.1　Primitive Cell and Crystal Plane92.2　Atomic Bonding11Reading Materials12Session 3　Band Model173.1　Introduction to Quantum Mechanics173.1.1　The Principle of Energy Quanta173.1.2　Schrodinger’s Wave Equation183.2　Band183.3　Effective Mass Theory19Reading Materials20Session 4　The Semiconductor in Equilibrium234.1　Charge Carriers in Semiconductor234.2　Intrinsic Semiconductor254.3　Extrinsic Semiconductor26Reading Materials28Session 5　Carrier Transport325.1　Overview of Carrier Transport325.2　Low Field Transport335.2.1　Mobility335.2.2　Microscopic Scattering Processes345.3　High Field Transport355.4　Diffusion Current36Reading Materials38Session 6　Nonequilibrium Excess Carriers in Semiconductor426.1　Recombination426.1.1　Band to Band Recombination426.1.2　Free_Exciton Recombination436.1.3　Auger Recombination436.1.4　Band_Impurity Recombination436.1.5　Surface Recombination446.2　Minority Carrier Lifetime446.3　Ambipolar Transport45Reading Materials46Session 7　The pn Junction (Ⅰ)497.1　Introduction497.2　Basic Structure of the pn Junction497.3　Energy Band Diagram for a pn Junction507.4　Ideal Current_Voltage Relationship517.5　Characteristics of a Practical Diode51Reading Materials52Session 8　The pn Junction(Ⅱ)578.1　Breakdown in pn Junction578.2　Small_Signal Diffusion Resistance of the pn Junction578.3　Junction Capacitance588.4　Diffusion or Storage Capacitance598.5　Diode Transients608.6　Circuit Models for Junction Diodes60Reading Materials61Session 9　Metal_Semiconductor Contacts659.1　Schottky Contacts659.1.1　Schottky Contacts in Equilibrium669.1.2　Schottky Contacts under Applied Bias689.2　Ohmic Contacts70Reading Materials72Session 10　Heterojunctions7510.1　Strain and Stress at Heterointerfaces7510.2　Heterojunction Materials7610.3　Energy_Band Diagram78Reading Materials79Session 11　The Bipolar Junction Transistor (Ⅰ)8211.1　The Bipolar Junction Transistor Construction8211.2　Transistor Action8211.3　Nonideal Effects8311.4　Base Resistance85Reading Materials86Session 12　The Bipolar Junction Transistor (Ⅱ)9012.1　Breakdown Voltage9012.2　Frequency Limits of BJT9112.3　The Schottky_Clamped Transistor9212.4　Small_Signal Transistor Model93Reading Materials94Session 13 ?Modern BJT Structures9713.1 ?Introduction9713.2 ?Deep_Trench Isolation9713.3 ?Polysilicon Emitter9813.4 ?Self_Aligned Polysilicon Base Contact9813.5 ?Pedestal Collector9813.6 ?SiGe_Base99Reading Materials99Session 14　Basics of MOSFETs10414.1　Introduction10414.2　General Characteristics of a MOSFET10414.3　MOS System10514.4　Work Function Differences10614.5　Flat_Band Voltage10614.6　Threshold Voltage107Reading Materials107Session 15　Nonideal Effects of MOSFETs11115.1　Introduction11115.2　Effective Mobility11115.3　Velocity Saturation11115.4　Channel_Length Modulation11215.5　DIBL11215.6　Hot_Carrier Effect11315.7　GIDL114Reading Materials114Session 16　Advanced MOSFET Devices11816.1　Introduction11816.2　Channel Doping Profile11816.3　Gate Stack11816.4　Source/Drain Design11916.5　Schottky_Barrier Source/Drain12016.6　Raised Source/Drain12016.7　SOI12116.8　Three Dimensional Structure121Reading Materials122Session 17　Introduction to Integrated Circuits12717.1　Introduction12717.2　Size and Complexity of Integrated Circuits12817.3　Semiconductor Device for Integrated Circuits12917.4　IC Design Process131Reading Materials132Session 18　Analog Integrated Circuits Design13818.1　Introduction13818.2　Analog Signal Processing14018.3　CMOS Technology14118.4　Amplifiers14118.5　Differential Amplifiers14218.6　Operational Amplifiers14318.7　Characterization of Op Amps144Reading Materials145Session 19　Digital Integrated Circuits Design14919.1　Introduction14919.2　The Static CMOS Inverter14919.2.1　Switching Threshold15019.2.2　Noise Margins15019.2.3　Performance of CMOS Inverter: The Dynamic Behavior15119.3　Designing Combinational Logic Gates in CMOS15319.3.1　Static CMOS Design15319.3.2　Dynamic CMOS Design156Reading Materials157Session 20 ?Semiconductor Memories16220.1 ?Introduction16220.2 ?SRAM16320.3 ?DRAM16420.4 ?Flash Memories165Reading Materials167Session 21　Radio Frequency Integrated ?Circuits Design17221.1　Introduction17221.2　RF System Performance Metrics17321.3　RF Transceiver Architectures17421.4　RF Passive Component17421.5　Low_Noise Amplifier17521.6　Frequency Synthesizer17621.7　Transmitter17721.7.1　Up conversion versus Downconversion17721.7.2　Mixer17821.7.3　RF PA (Power Amplifier)178Reading Materials179Session 22　Simulation and Verification18622.1　Introduction18622.2　SPICE Circuit Simulator18622.2.1　SPICE Models18622.2.2　Circuit Simulation18822.3　Circuit Design Automation with Verilog18922.3.1　Digital Design Flow18922.3.2　Verilog HDL19022.4　Verification191Reading Materials192Session 23　Introduction to the SemiconductorTechnology (Ⅰ)19623.1　The Development of Semiconductor Technology19623.2　Wafer Fabrication19723.2.1　Wafer Preparation19723.2.2　Oxidation19823.2.3　Diffusion19923.2.4　Ion Implantation19923.2.5　Chemical_Vapor Deposition19923.2.6　Metallization20023.2.7　Photolithography20023.2.8　Etching201Reading Materials202Session 24　Introduction to the Semiconductor Technology (Ⅱ)20524.1　Assembly20524.2　Metrology207Reading Materials209Session 25　Bipolar Technology and GaAs Digital Logic Process21225.1　Bipolar Technology21225.1.1　pn Junction Isolated Bipolar IC Technology21225.1.2　Dielectrically Isolated Bipolar Technologies21625.2　GaAs Digital Logic Process217Reading Materials219Session 26　CMOS Technology22426.1　CMOS Fabrication Sequence22426.2　Twin Well and Retrograde Well22626.3　Isolation22726.4　Structures that Reduce the Drain Field22726.5　Gate Engineering228Reading Materials229Session 27　Reliability23527.1　Introduction23527.2　Failure Modes237Reading Materials241?ú? 考 译 文第1讲　半导体概述2451.1　什么是半导体2451.2　半导体的分类246第2讲　晶体结构2472.1　原胞和晶面2472.2　原子价键249第3讲　能带模型2503.1　量子力学简介2503.2　能带2513.3　有效质量理论251第4讲　平衡半导体2524.1　半导体中的带电载流子2524.2　本征半导体2544.3　非本征半导体255第5讲　载流子输运2565.1　载流子输运概要2565.2　低场输运2585.3　强场输运2605.4　扩散电流260第6讲　半导体中的非平衡过剩载流子2616.1　复合2626.2　少数载流子寿命2646.3　双极输运264第7讲　pn结（Ⅰ）2657.1　概述2657.2　pn结的基本结构2657.3　pn结的能带图2667.4　理想电流_电