Fundamentals of Modern VLSI Devices 现代积体电路元件基础

基本信息

Format Hardback | 622 pages

Dimensions 173 x 250 x 32mm | 1,330g

Publication date 10 Feb 2022

Publisher Cambridge University Press

Publication City/Country Cambridge, United Kingdom

Language English

Edition Revised

Edition Statement 3rd Revised edition

ISBN10 1108480020

ISBN13 9781108480024

信息仅供参考，具体以实物为准

书籍简介

彻底更新的第三版经典和广泛采用的文本，是实际晶体管设计和课堂教学的选择。涵盖各种新发展，作者详细讨论了现代VLSI设备的基本属性和设计，以及影响性能的因素。本书包含约25%的新材料，内容已扩大到包括高k栅极电介质、金属栅极技术、应力硅迁移率、MOSFET的非GCA（渐变通道近似）建模、短通道FinFETS和SOI上的对称侧向双极晶体管。各章经过重新编排，将附录整合到正文中，使学习体验更加顺畅，还包括大量额外的章末作业练习（+30%），让学生参与到现实世界的问题中，并测试他们的理解。对于学习高级半导体器件课程的高年级本科生和研究生，以及半导体行业中的硅器件从业人员来说，这是一本很好的教材。

A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.

作者简介

袁涛是加州大学圣地亚哥分校电气和计算机工程系的特聘教授，此前曾在纽约IBM的T. J. Watson研究中心工作。他是IEEE会员。Tak H. Ning是纽约T. J. Watson研究中心的IBM研究员（已退休）。他是IEEE和美国物理学会的会员，也是美国国家工程院的成员。

Yuan Taur is a Distinguished Professor of Electrical and Computer Engineering at the University of California, San Diego, having previously worked at IBM's T. J. Watson Research Center, New York. He is an IEEE Fellow. Tak H. Ning is an IBM Fellow (Retired) at the T. J. Watson Research Center, New York. He is a Fellow of the IEEE and the American Physical Society, and a member of the US National Academy of Engineering.